APTGF200U60D4 APTGF200U60D4 ? rev 1 june, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 250 i c continuous collector current t c = 80c 200 i cm pulsed collector current t c = 25c 400 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 735 w rbsoa reverse bias safe operation area t j = 125c 400a@420v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. 3 5 2 1 5 3 4 1 2 v ces = 600v i c = 200a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching freque nc y up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? low stray inductance - m6 connectors for power - m4 connectors for signal ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat single switch n p t igbt power module
APTGF200U60D4 APTGF200U60D4 ? rev 1 june, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 1 500 a i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 1 ma t j = 25c 1.95 2.45 v ce(on) collector emitter on voltage v ge = 15v i c = 200a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 4ma 4.5 5.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 9 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 0.8 nf t d(on) tur n-o n delay ti me 163 t r rise time 43 t d(off) turn-off delay time 253 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 200a r g = 1.5 ? 33 ns t d(on) tur n-o n delay ti me 183 t r rise time 49 t d(off) turn-off delay time 285 t f fall time 41 ns e on turn on energy 4.6 e off turn off energy inductive switching (125c) v ge = 15v v bus = 300v i c = 200a r g = 1.5 ? 6.3 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 125c 500 a t j = 25c 1.25 1.6 v f diode forward voltage i f = 200a v ge = 0v t j = 125c 1.2 v e r reverse recovery energy t j = 125c 4.1 mj t j = 25c 12 q rr reverse recovery charge i f = 200a v r = 300v di/dt =4000a/s t j = 125c 19 c
APTGF200U60D4 APTGF200U60D4 ? rev 1 june, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.17 r thjc junction to case diode 0.29 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c m6 3 5 torque mounting torque m4 1 2 n.m wt package weight 420 g package outline (dimensions in mm)
APTGF200U60D4 APTGF200U60D4 ? rev 1 june, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 250 300 350 400 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 50 100 150 200 250 300 350 400 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =25c t j =125c 0 50 100 150 200 250 300 350 400 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 2.5 5 7.5 10 12.5 15 0 50 100 150 200 250 300 350 400 i c (a) e (mj) v ce = 300v v ge = 15v r g = 1.5 ? t j = 125c eon eoff er 0 4 8 12 16 024681012 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 200a t j = 125c switching energy losses vs gate resistance reverse safe operating area 0 100 200 300 400 500 0 100 200 300 400 500 600 v ce (v) i c (a) v ge =15v t j =125c r g =1.5 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGF200U60D4 APTGF200U60D4 ? rev 1 june, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 hard switching zcs zv s 0 20 40 60 80 100 0 50 100 150 200 250 300 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =1.5 ? t j =125c t c =75c operating frequency vs collector curren t forward characteristic of diode t j =25c t j =125c 0 50 100 150 200 250 300 350 400 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v f (v) i c (a) maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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